公开(公告)号：US11427888B2

公开(公告)日：2022-08-30

申请号：US17040654

申请日：2019-10-23

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  Satoshi Kumagai ,  U Tani ,  Yuuji Sato

IPC: C23C14/14 ,  C22C9/00 ,  B22D7/00 ,  B22F3/16 ,  C23C14/34 ,  H01L21/285

Abstract: A sputtering target material contains one kind or two or more kinds selected from the group consisting of Ag, As, Pb, Sb, Bi, Cd, Sn, Ni, and Fe in a range of 5 massppm or more and 50 massppm or less, in terms of a total content; and a balance consisting of Cu and an inevitable impurity. In the sputtering target material, in a case in which an average crystal grain size calculated as an area average without twins is denoted by X1 (μm), and a maximum intensity of pole figure is denoted by X2, upon an observation with an electron backscatter diffraction method, Expression (1): 2500>19×X1+290×X2 is satisfied, a kernel average misorientation (KAM) of a crystal orientation measured by an electron backscatter diffraction method is 2.0° or less, and a relative density is 95% or more.

公开(公告)号：US20210010105A1

公开(公告)日：2021-01-14

申请号：US17040654

申请日：2019-10-23

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  Satoshi Kumagai ,  U Tani ,  Yuuji Sato

IPC: C22C9/00 ,  C23C14/34 ,  C23C14/14 ,  B22D7/00 ,  B22F3/16

Abstract: A sputtering target material contains one kind or two or more kinds selected from the group consisting of Ag, As, Pb, Sb, Bi, Cd, Sn, Ni, and Fe in a range of 5 massppm or more and 50 massppm or less, in terms of a total content; and a balance consisting of Cu and an inevitable impurity. In the sputtering target material, in a case in which an average crystal grain size calculated as an area average without twins is denoted by X1 (μm), and a maximum intensity of pole figure is denoted by X2, upon an observation with an electron backscatter diffraction method, Expression (1): 2500>19×X1+290×X2 is satisfied, a kernel average misorientation (KAM) of a crystal orientation measured by an electron backscatter diffraction method is 2.0° or less, and a relative density is 95% or more.

公开(公告)号：US10889889B2

公开(公告)日：2021-01-12

申请号：US15754403

申请日：2016-08-03

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  U Tani ,  Yuuji Sato ,  Fumitake Kikuchi ,  Isao Arai

IPC: C23C14/34 ,  C25C1/12 ,  C25C7/02 ,  C22F1/08 ,  C22C9/00

Abstract: A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.

公开(公告)号：US20180237901A1

公开(公告)日：2018-08-23

申请号：US15754403

申请日：2016-08-03

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  U Tani ,  Yuuji Sato ,  Fumitake Kikuchi ,  Isao Arai

IPC: C23C14/34 ,  C22C9/00 ,  C22F1/08 ,  C25C1/12 ,  C25C7/02

CPC classification number: C23C14/3414 ,  C22C9/00 ,  C22F1/08 ,  C25C1/12 ,  C25C7/02

Abstract: A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.