Invention Grant
- Patent Title: Material for detecting photoresist and method of fabricating semiconductor device using the same
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Application No.: US16037232Application Date: 2018-07-17
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Publication No.: US10890848B2Publication Date: 2021-01-12
- Inventor: Yoonjung Jang , Sooyoung Kim , Boodeuk Kim , Soojin Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0176301 20171220
- Main IPC: G03F7/40
- IPC: G03F7/40 ; G01N21/64 ; G03F7/32 ; C08B37/16 ; G03F7/16 ; C08L5/16
Abstract:
Provided are a material for detecting photoresist and a method for detecting photoresist using the same. The material for detecting photoresist may include a macrocyclic molecule having a hollow structure and a fluorescent substance which is labeled on the macrocyclic molecule, and the macrocyclic molecule is at least one of cyclodexrin, cucurbituril, calixarene, pillararene and catenane.
Public/Granted literature
- US20190187052A1 MATERIAL FOR DETECTING PHOTORESIST AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2019-06-20
Information query
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