- 专利标题: Perpendicular SOT MRAM
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申请号: US16458651申请日: 2019-07-01
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公开(公告)号: US10891999B1公开(公告)日: 2021-01-12
- 发明人: Goran Mihajlovic , Michael Grobis
- 申请人: WESTERN DIGITAL TECHNOLOGIES, INC.
- 申请人地址: US CA San Jose
- 专利权人: WESTERN DIGITAL TECHNOLOGIES, INC.
- 当前专利权人: WESTERN DIGITAL TECHNOLOGIES, INC.
- 当前专利权人地址: US CA San Jose
- 代理机构: Vierra Magen Marcus LLP
- 主分类号: G11C11/16
- IPC分类号: G11C11/16 ; H01L43/08 ; H01L43/06
摘要:
A MRAM memory cell comprises a SHE layer, a magnetic bit layer with perpendicular anisotropy and an Oersted layer. The magnetic bit layer has a switchable direction of magnetization in order to store data. Data is written to the MRAM memory cell using the Spin Hall Effect so that spin current generated in the SHE layer exerts a torque on the magnetic bit layer while the Oersted layer provides heat and an Oersted field to enable deterministic switching. Data is read form the MRAM memory cell using the Anomalous Hall Effect and sensing voltage at the Oersted layer.