Invention Grant
- Patent Title: Removal apparatus for removing residual gas and substrate treating facility including the same
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Application No.: US15859480Application Date: 2017-12-30
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Publication No.: US10892171B2Publication Date: 2021-01-12
- Inventor: Heokjae Lee , Hahn Park , Jae Boo Kim , Dongil Yoon , MinYoung Hwang , Se Un Park , Kang-Min Park , Yongjoon Hong , Sung Baek Kim , Woo Jin Park
- Applicant: Samsung Electronics Co., Ltd. , CYMECHS Inc.
- Applicant Address: KR Suwon-si; KR Hwaseong-si
- Assignee: Samsung Electronics Co., Ltd.,CYMECHS Inc.
- Current Assignee: Samsung Electronics Co., Ltd.,CYMECHS Inc.
- Current Assignee Address: KR Suwon-si; KR Hwaseong-si
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2017-0024955 20170224
- Main IPC: B08B7/00
- IPC: B08B7/00 ; H01L21/67 ; H01L21/677

Abstract:
A removal apparatus for removing residual gases and a substrate treating facility for removing residual gases is disclosed. The residual gas removal apparatus includes a housing, a gas supply for providing a non-reactive gas into the housing, a supporting member provided to support a substrate and positioned in the housing, a heat radiating member spaced apart from the supporting member and positioned in the housing, and a heating unit for providing heat toward the supporting member and positioned between the heat radiating member and the supporting member.
Public/Granted literature
- US20180247836A1 REMOVAL APPARATUS FOR REMOVING RESIDUAL GAS AND SUBSTRATE TREATING FACILITY INCLUDING THE SAME Public/Granted day:2018-08-30
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