Invention Grant
- Patent Title: Substrate processing apparatus having top plate with through hole and substrate processing method
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Application No.: US16407245Application Date: 2019-05-09
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Publication No.: US10892176B2Publication Date: 2021-01-12
- Inventor: Yoshinori Ikeda , Shota Umezaki , Kenji Nishi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JP2018-093939 20180515
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/02 ; B05C11/02 ; H01L21/687 ; F26B21/02 ; B05B15/555 ; B05D1/00

Abstract:
A substrate processing apparatus according to an aspect of the present disclosure includes a substrate holder, a top plate portion, a gas supply unit, and an arm. The substrate holder holds a substrate. The top plate is installed to face the substrate held on the substrate holder, and has a through hole formed therethrough at a position facing the center of the substrate. The gas supply supplies an atmosphere adjustment gas to a space between the substrate holder and the top plate. The processing liquid nozzle ejects a liquid to the substrate. The arm holds the processing liquid nozzle and moves the processing liquid nozzle between a processing position where the processing liquid is ejected from the processing liquid nozzle through the through hole and a standby position outside the substrate.
Public/Granted literature
- US20190355593A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD Public/Granted day:2019-11-21
Information query
IPC分类: