公开(公告)号：US20240339339A1

公开(公告)日：2024-10-10

申请号：US18750287

申请日：2024-06-21

Applicant: Tokyo Electron Limited

Inventor： Shota Umezaki ,  Hiroaki Inadomi

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/673 ,  H01L21/677

CPC classification number: H01L21/67034 ,  H01L21/67126 ,  H01L21/67383 ,  H01L21/67748 ,  H01L21/02101

Abstract: A substrate processing apparatus includes a transfer block in which a transfer device configured to transfer a substrate is placed, and a processing block provided adjacent to the transfer block. The processing block includes a liquid film forming unit configured to form a liquid film on a top surface of the substrate which is held horizontally, and a drying unit configured to replace the liquid film with a supercritical fluid to dry the substrate. The drying unit includes a pressure vessel having therein a drying chamber for the substrate, a cover body configured to close an opening of the drying chamber, and a supporting body configured to support the substrate horizontally in the drying chamber. The supporting body is fixed to the drying chamber. The transfer device advances into the drying chamber through the opening of the drying chamber while holding horizontally the substrate having the liquid film thereon.

公开(公告)号：US11688613B2

公开(公告)日：2023-06-27

申请号：US17388268

申请日：2021-07-29

Applicant: Tokyo Electron Limited

Inventor： Shota Umezaki ,  Hiroaki Inadomi

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/677

CPC classification number: H01L21/67034 ,  H01L21/67253 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/02101

Abstract: A substrate processing apparatus is configured to dry a substrate by replacing a liquid film formed on a top surface of the substrate, which is horizontally held, with a supercritical fluid. The substrate processing apparatus includes a pressure vessel, a cover body and a supporting body. The pressure vessel has therein a drying chamber for the substrate. The cover body is configured to close an opening of the drying chamber. The supporting body is configured to support the substrate horizontally within the drying chamber. The supporting body is fixed to the drying chamber.

公开(公告)号：US12283495B2

公开(公告)日：2025-04-22

申请号：US17645779

申请日：2021-12-23

Applicant: Tokyo Electron Limited

Inventor： Mikio Nakashima ,  Shota Umezaki ,  Hiroaki Inadomi

IPC: H01L21/67 ,  B08B3/02 ,  B08B3/08 ,  F26B5/00 ,  H01L21/02

Abstract: A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

公开(公告)号：US20190341272A1

公开(公告)日：2019-11-07

申请号：US16395488

申请日：2019-04-26

Applicant: Tokyo Electron Limited

Inventor： Yoshinori Ikeda ,  Shota Umezaki ,  Kenji Nishi

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673

Abstract: A substrate processing apparatus according to the present disclosure includes: a substrate processing unit; a partition wall; and a liquid supply source. The substrate processing unit includes a substrate holder and performs a liquid processing on a substrate. The partition wall serves as a partition wall between a first space from a carry-in/out port through which the substrate is carried in/out to the substrate processing unit, and a second space other than the first space. The liquid supply source is provided in the second space and supplies a processing liquid to the substrate.

公开(公告)号：US12057326B2

公开(公告)日：2024-08-06

申请号：US17389883

申请日：2021-07-30

Applicant: Tokyo Electron Limited

Inventor： Shota Umezaki ,  Hiroaki Inadomi

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  H01L21/02

CPC classification number: H01L21/67034 ,  H01L21/67126 ,  H01L21/67383 ,  H01L21/67748 ,  H01L21/02101

Abstract: A substrate processing apparatus includes a transfer block in which a transfer device configured to transfer a substrate is placed, and a processing block provided adjacent to the transfer block. The processing block includes a liquid film forming unit configured to form a liquid film on a top surface of the substrate which is held horizontally, and a drying unit configured to replace the liquid film with a supercritical fluid to dry the substrate. The drying unit includes a pressure vessel having therein a drying chamber for the substrate, a cover body configured to close an opening of the drying chamber, and a supporting body configured to support the substrate horizontally in the drying chamber. The supporting body is fixed to the drying chamber. The transfer device advances into the drying chamber through the opening of the drying chamber while holding horizontally the substrate having the liquid film thereon.

公开(公告)号：US11742232B2

公开(公告)日：2023-08-29

申请号：US17267503

申请日：2019-07-26

Applicant: Tokyo Electron Limited

Inventor： Yoshinori Ikeda ,  Shota Umezaki ,  Shigeru Moriyama ,  Ryo Yamamoto ,  Takashi Uno

IPC: H01L21/673 ,  B08B3/10 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/67393 ,  B08B3/10 ,  H01L21/02057 ,  H01L21/67028

Abstract: A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).

公开(公告)号：US10892176B2

公开(公告)日：2021-01-12

申请号：US16407245

申请日：2019-05-09

Applicant: Tokyo Electron Limited

Inventor： Yoshinori Ikeda ,  Shota Umezaki ,  Kenji Nishi

IPC: H01L21/67 ,  H01L21/02 ,  B05C11/02 ,  H01L21/687 ,  F26B21/02 ,  B05B15/555 ,  B05D1/00

Abstract: A substrate processing apparatus according to an aspect of the present disclosure includes a substrate holder, a top plate portion, a gas supply unit, and an arm. The substrate holder holds a substrate. The top plate is installed to face the substrate held on the substrate holder, and has a through hole formed therethrough at a position facing the center of the substrate. The gas supply supplies an atmosphere adjustment gas to a space between the substrate holder and the top plate. The processing liquid nozzle ejects a liquid to the substrate. The arm holds the processing liquid nozzle and moves the processing liquid nozzle between a processing position where the processing liquid is ejected from the processing liquid nozzle through the through hole and a standby position outside the substrate.

公开(公告)号：US20240242977A1

公开(公告)日：2024-07-18

申请号：US18412768

申请日：2024-01-15

Applicant: Tokyo Electron Limited

Inventor： Shota Umezaki ,  Takahiro Hayashida ,  Mikio Nakashima ,  Takafumi Yasunaga

IPC: H01L21/67

CPC classification number: H01L21/67023 ,  H01L21/67167 ,  H01L21/67196

Abstract: A substrate processing apparatus includes a unit block including multiple liquid film forming devices each configured to form a liquid film on a top surface of a substrate, and a drying device configured to replace the liquid film with a supercritical fluid to dry the substrate; and a transfer block provided between the multiple liquid film forming devices and the drying device. The transfer block includes a transfer device configured to transfer the substrate between the multiple liquid film forming devices and the drying device, and a length of a transfer path of the substrate is equal between each of the multiple liquid film forming devices and the drying device.

公开(公告)号：US20220319876A1

公开(公告)日：2022-10-06

申请号：US17657821

申请日：2022-04-04

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hayashi ,  Hiroaki Inadomi ,  Shota Umezaki ,  Suguru Enokida ,  Kouji Kimoto

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/677 ,  B08B3/08 ,  B08B13/00

Abstract: A substrate processing apparatus includes multiple first substrate processing devices, one or more second substrate processing devices and a transfer unit. Each of the multiple first substrate processing devices is configured to process a substrate one by one. The one or more second substrate processing devices are configured to simultaneously process multiple substrates, which are processed in the multiple first substrate processing devices. The transfer unit is configured to simultaneously carry the multiple substrates, which are processed in the multiple first substrate processing devices, into a same second substrate processing device.

公开(公告)号：US11217451B2

公开(公告)日：2022-01-04

申请号：US16737526

申请日：2020-01-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kosugi ,  Shota Umezaki ,  Kouzou Tachibana ,  Ryo Yamamoto

IPC: H01L21/306 ,  H01L21/687 ,  H01L21/67

Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.