- 专利标题: MOS transistors in parallel
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申请号: US16059654申请日: 2018-08-09
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公开(公告)号: US10892321B2公开(公告)日: 2021-01-12
- 发明人: François Tailliet
- 申请人: STMicroelectronics (Rousset) SAS
- 申请人地址: FR Rousset
- 专利权人: STMicroelectronics (Rousset) SAS
- 当前专利权人: STMicroelectronics (Rousset) SAS
- 当前专利权人地址: FR Rousset
- 代理机构: Slater Matsil, LLP
- 优先权: FR1757701 20170816
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/06 ; H01L27/088 ; H01L21/762 ; H01L29/10 ; H01L29/78 ; H01L21/8234
摘要:
An electronic chip includes first transistors connected in parallel so that gates of the first transistors are interconnected, drain areas of the first transistors are interconnected, and source areas of the first transistors are interconnected. The first transistors are separated from one another by first isolating trenches. The chip also includes second transistors and second isolating trenches. The second transistors are separated from one another by the second isolating trenches. The first isolating trenches have a maximum width that is smaller than a maximum width of all the second isolating trenches.
公开/授权文献
- US20190058034A1 MOS TRANSISTORS IN PARALLEL 公开/授权日:2019-02-21
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