Invention Grant
- Patent Title: Method of rounding fin-shaped structure
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Application No.: US16396788Application Date: 2019-04-29
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Publication No.: US10892348B2Publication Date: 2021-01-12
- Inventor: Hao-Hsuan Chang , Bin-Siang Tsai , Ting-An Chien , Yi-Liang Ye
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/62 ; H01L21/02 ; H01L21/265 ; H01L21/308 ; H01L21/762 ; H01L29/78

Abstract:
A method of rounding fin-shaped structures includes the following steps. A substrate including fin-shaped structures, and pad oxide caps and pad nitride caps covering the fin-shaped structures from bottom to top are provided. An isolation structure fills between the fin-shaped structures. A removing process is performed to remove a top part of the isolation structure and expose top parts of the fin-shaped structures. An oxidation process is performed to oxidize sidewalls of the top parts of the fin-shaped structures, thereby forming oxidized parts covering sidewalls of the top parts of the fin-shaped structures. The pad nitride caps are removed. The pad oxide caps and the oxidized parts are removed at the same time, thereby forming rounding fin-shaped structures.
Public/Granted literature
- US20200343371A1 METHOD OF ROUNDING FIN-SHAPED STRUCTURE Public/Granted day:2020-10-29
Information query
IPC分类: