Invention Grant
- Patent Title: Phase change memory structures and devices
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Application No.: US15997628Application Date: 2018-06-04
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Publication No.: US10892406B2Publication Date: 2021-01-12
- Inventor: Stephen Russell , Andrea Gotti , Andrea Redaelli , Enrico Varesi , Innocenzo Tortorelli , Lorenzo Fratin , Alessandro Sebastiani
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alliance IP, LLC
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00

Abstract:
A phase change memory (PCM) cell can include a PCM layer. A first electrode and a second electrode disposed on opposite sides of the PCM layer. The first electrode, the second electrode, or both includes a metal ceramic composite material layer disposed between an upper barrier layer and a lower barrier layer and wherein the metal ceramic composite material layer provides a corresponding electrode with an electrical resistivity of from 10 mOhm-cm to 1000 mOhm-cm.
Public/Granted literature
- US20190044060A1 PHASE CHANGE MEMORY STRUCTURES AND DEVICES Public/Granted day:2019-02-07
Information query
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