Invention Grant
- Patent Title: Film formation apparatus
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Application No.: US16143927Application Date: 2018-09-27
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Publication No.: US10896841B2Publication Date: 2021-01-19
- Inventor: Daisuke Ono
- Applicant: SHIBAURA MECHATRONICS CORPORATION
- Applicant Address: JP Yokohama
- Assignee: SHIBAURA MECHATRONICS CORPORATION
- Current Assignee: SHIBAURA MECHATRONICS CORPORATION
- Current Assignee Address: JP Yokohama
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2017-190935 20170929
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01L21/687 ; H01J37/32 ; C23C14/00 ; C23C14/56 ; C23C14/08 ; C23C14/50

Abstract:
A film formation apparatus includes a film formation unit which includes a film formation room having an opening at one end, has a target formed of a film formation material in the film formation room, and deposits the film formation material of the target on a surface of a workpiece facing the opening by plasma produced by a sputter gas in the film formation room, and a carrier that carries the workpiece along a predetermined carrying path so that the workpiece repeatedly pass through a facing region which faces the opening of the film formation room and a non-facing region which does not face the opening of the film formation room. The carrier includes a low-pressure position where the workpiece is placed and which causes an interior of the film formation room to be lower than a plasma ignition lower limit pressure and to be equal to or higher than a plasma electric discharge maintaining lower limit pressure when passing through the facing region, and a high-pressure position where workpiece is not placed and which causes the interior of the film formation room to be equal to or higher than the plasma ignition lower limit pressure when passing through the facing region.
Public/Granted literature
- US20190103300A1 FILM FORMATION APPARATUS Public/Granted day:2019-04-04
Information query
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