- 专利标题： Substrate treating method and apparatus used therefor
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申请号： US15854010申请日： 2017-12-26
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公开(公告)号： US10900126B2公开(公告)日： 2021-01-26
- 发明人: Yuji Tanaka , Chisayo Nakayama , Masahiko Harumoto , Masaya Asai , Yasuhiro Fukumoto , Tomohiro Matsuo , Takeharu Ishii
- 申请人： SCREEN Holdings Co., Ltd.
- 申请人地址： JP Kyoto
- 专利权人： SCREEN Holdings Co., Ltd.
- 当前专利权人： SCREEN Holdings Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Ostrolenk Faber LLP
- 优先权： JP2017-025226 20170214
- 主分类号： C23C16/56
- IPC分类号： C23C16/56 ; H01L21/67 ; H01L21/48 ; H01L21/02 ; H01L21/687 ; H01L21/033
摘要：
Disclosed is a substrate treating method for performing a heat treatment of a substrate in a heat treating space. The method includes a loading step of loading the substrate on support pins, an exhaust step of exhausting gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, an under-substrate space gas discharging step of discharging gas within an under-substrate space between the substrate and the top face of the heat treating plate, and a heat treating step of retracting the support pins into the heat treating plate, and performing the heat treatment of the substrate placed on the top face of the heat treating plate in the heat treating space.
公开/授权文献
- US20180230598A1 SUBSTRATE TREATING METHOD AND APPARATUS USED THEREFOR 公开/授权日：2018-08-16
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