Invention Grant
- Patent Title: Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device
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Application No.: US16422659Application Date: 2019-05-24
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Publication No.: US10903078B2Publication Date: 2021-01-26
- Inventor: Hans-Joachim Schulze , Alexander Breymesser , Guenter Denifl , Mihai Draghici , Bernhard Goller , Tobias Franz Wolfgang Hoechbauer , Wolfgang Lehnert , Roland Rupp , Werner Schustereder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homilier, PLLC
- Priority: DE102018112729 20180528,DE102019111377 20190502
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L29/16 ; H01L21/265 ; H01L21/02 ; H01L21/324

Abstract:
A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.
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