Invention Grant
- Patent Title: Semiconductor device including silane based adhesion promoter and method of making
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Application No.: US16335527Application Date: 2016-09-26
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Publication No.: US10916486B2Publication Date: 2021-02-09
- Inventor: Andrew J. Brown , Chi-Mon Chen , Robert Alan May , Amanda E. Schuckman , Wei-Lun Kane Jen
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/US2016/053818 WO 20160926
- International Announcement: WO2018/057040 WO 20180329
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/29 ; H01L23/538 ; H01L21/56 ; H01L23/367

Abstract:
Various embodiments disclosed relate to semiconductor device and method of making the same using functional silanes. In various embodiments, the present invention provides a semiconductor device including a silicon die component having a first silica surface. The semiconductor device includes a dielectric layer having a second surface generally facing the first silica surface. The semiconductor device includes an interface defined between the first surface and the second surface. The semiconductor device also includes a silane based adhesion promoter layer disposed within the junction and bonded to at least one of the first silica surface and the dielectric layer second surface.
Public/Granted literature
- US20190355642A1 SEMICONDUCTOR DEVICE AND METHOD OF MAKING Public/Granted day:2019-11-21
Information query
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