Invention Grant
- Patent Title: Uniform bottom spacer for VFET devices
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Application No.: US16797208Application Date: 2020-02-21
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Publication No.: US10916650B2Publication Date: 2021-02-09
- Inventor: Steven Bentley , Cheng Chi , Chanro Park , Ruilong Xie , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Joseph Petrokaitis
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/8234
Abstract:
Vertical field effect transistor (VFET) structures and methods of fabrication include a bottom spacer having a uniform thickness. The bottom spacer includes a bilayer portion including a first layer formed of an oxide, for example, and a second layer formed of a nitride, for example, on the first layer, and a monolayer portion of a fourth layer of a nitride for example, immediately adjacent to and intermediate the fin and the bilayer portion.
Information query
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