- 专利标题： Semiconductor structures and methods of forming the same
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申请号： US15230698申请日： 2016-08-08
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公开(公告)号： US10923566B2公开(公告)日： 2021-02-16
- 发明人: Yu-Lien Huang , Yung-Ta Li , Meng-Ku Chen
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/78 ; H01L21/3065 ; H01L21/02 ; H01L29/66 ; H01L29/775 ; B82Y10/00 ; B82Y40/00 ; H01L29/786 ; H01L29/423 ; H01L29/16
摘要：
Semiconductor structures and methods of forming the same are provided. A semiconductor structure includes a substrate and an annular nanowire disposed over the substrate.
公开/授权文献
- US20160343804A1 SEMICONDUCTOR STRUCTURES AND METHODS OF FORMING THE SAME 公开/授权日：2016-11-24
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