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    SEMICONDUCTOR DEVICE AND FORMATION THEREOF
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND FORMATION THEREOF 有权
    半导体器件及其形成

    公开(公告)号：US20150129938A1

    公开(公告)日：2015-05-14

    申请号：US14074888

    申请日：2013-11-08

    申请人： Taiwan Semiconductor Manufacturing Company Limited

    发明人： Mao-Lin Huang ,  Chien-Hsun Wang ,  Chun-Hsiung Lin ,  Meng-Ku Chen ,  Li-Ting Wang ,  Hung-Ta Lin

    IPC分类号： H01L29/78 ,  H01L21/322 ,  H01L21/324

    CPC分类号： H01L29/7786 ,  H01L21/322 ,  H01L21/324 ,  H01L29/1033 ,  H01L29/205 ,  H01L29/66522 ,  H01L29/78 ,  H01L29/7848

    摘要： A semiconductor devices and method of formation are provided herein. A semiconductor device includes a gate structure over a channel and an active region adjacent the channel. The active region includes a repaired doped region and a growth region over the repaired doped region. The repaired doped region includes a first dopant and a second dopant, where the second dopant is from the growth region. A method of forming a semiconductor device includes increasing a temperature during exposure to at least one of dopant(s) or agent(s) to form an active region adjacent a channel, where the active region includes a repaired doped region and a growth region over the repaired doped region.

    摘要翻译： 本文提供半导体器件和形成方法。 半导体器件包括沟道上的栅极结构和与沟道相邻的有源区。 有源区域包括修复的掺杂区域和修复的掺杂区域上的生长区域。 修复的掺杂区域包括第一掺杂剂和第二掺杂剂，其中第二掺杂剂来自生长区域。 一种形成半导体器件的方法包括：在暴露于至少一种或多种掺杂剂或一种或多种掺杂剂的过程中增加温度，以形成邻近沟道的有源区，其中有源区包括修复的掺杂区和超过 修复后的掺杂区域。

    Semiconductor device and formation thereof
    3.
    发明授权
    Semiconductor device and formation thereof 有权
    半导体器件及其形成

    公开(公告)号：US09184289B2

    公开(公告)日：2015-11-10

    申请号：US14074888

    申请日：2013-11-08

    申请人： Taiwan Semiconductor Manufacturing Company Limited

    发明人： Mao-Lin Huang ,  Chien-Hsun Wang ,  Chun-Hsiung Lin ,  Meng-Ku Chen ,  Li-Ting Wang ,  Hung-Ta Lin

    IPC分类号： H01L29/78 ,  H01L21/324 ,  H01L21/322

    CPC分类号： H01L29/7786 ,  H01L21/322 ,  H01L21/324 ,  H01L29/1033 ,  H01L29/205 ,  H01L29/66522 ,  H01L29/78 ,  H01L29/7848

    摘要： A semiconductor devices and method of formation are provided herein. A semiconductor device includes a gate structure over a channel and an active region adjacent the channel. The active region includes a repaired doped region and a growth region over the repaired doped region. The repaired doped region includes a first dopant and a second dopant, where the second dopant is from the growth region. A method of forming a semiconductor device includes increasing a temperature during exposure to at least one of dopant(s) or agent(s) to form an active region adjacent a channel, where the active region includes a repaired doped region and a growth region over the repaired doped region.

    摘要翻译： 本文提供半导体器件和形成方法。 半导体器件包括沟道上的栅极结构和与沟道相邻的有源区。 有源区域包括修复的掺杂区域和修复的掺杂区域上的生长区域。 修复的掺杂区域包括第一掺杂剂和第二掺杂剂，其中第二掺杂剂来自生长区域。 一种形成半导体器件的方法包括：在暴露于至少一种或多种掺杂剂或一种或多种掺杂剂的过程中增加温度，以形成邻近沟道的有源区，其中有源区包括修复的掺杂区和超过 修复后的掺杂区域。

    Delta doping layer in MOSFET source/drain region
    6.
    发明授权
    Delta doping layer in MOSFET source/drain region 有权
    MOSFET源极/漏极区域中的增量掺杂层

    公开(公告)号：US09166035B2

    公开(公告)日：2015-10-20

    申请号：US14025134

    申请日：2013-09-12

    申请人： Taiwan Semiconductor Manufacturing Company Limited

    发明人： Hung-Ta Lin ,  Mao-Lin Huang ,  Li-Ting Wang ,  Chien-Hsun Wang ,  Meng-Ku Chen ,  Chun-Hsiung Lin ,  Pang-Yen Tsai ,  Hui-Cheng Chang

    IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/78

    CPC分类号： H01L29/78 ,  H01L29/0847 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7784 ,  H01L29/7785

    摘要： A transistor includes a gate terminal, a source terminal and a drain terminal. At least one of the source and drain terminals has a layered configuration that includes a terminal layer and an intervening layer. The terminal layer has a top surface and a bottom surface. The intervening layer is located within the terminal layer, between and spaced from the top and bottom surfaces, is oriented to be perpendicular to current flow, and is less than one tenth the thickness of the terminal layer. The terminal layer and the intervening layer include a common semiconductive compound and a common dopant, with a concentration of the dopant in the intervening layer being over ten times an average concentration of the dopant in the terminal layer.

    摘要翻译： 晶体管包括栅极端子，源极端子和漏极端子。 源极和漏极端子中的至少一个具有包括端子层和中间层的分层结构。 端子层具有顶表面和底表面。 所述中间层位于所述端层内，位于所述顶表面和所述底表面之间并且与所述顶表面和所述底表面间隔开的位置被定向成垂直于电流，并且小于所述端子层的厚度的十分之一。 端子层和中间层包括共同的半导体化合物和公共掺杂剂，其中间隙中的掺杂剂的浓度是端子层中掺杂剂的平均浓度的十倍以上。