Invention Grant
- Patent Title: RF switch with compensation
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Application No.: US16872829Application Date: 2020-05-12
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Publication No.: US10931275B2Publication Date: 2021-02-23
- Inventor: Semen Syroiezhin , Pablo Araujo Do Nascimento , Winfried Bakalski , Andrea Cattaneo , Jochen Essel , Oguzhan Oezdamar , Johannes Klaus Rimmelspacher , Valentyn Solomko , Danial Tayari , Andreas Wickmann
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H03K17/00
- IPC: H03K17/00 ; H03K17/16 ; H03K17/56 ; G05F1/10

Abstract:
A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.
Public/Granted literature
- US20200321957A1 RF Switch with Compensation Public/Granted day:2020-10-08
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