公开(公告)号：US10931275B2

公开(公告)日：2021-02-23

申请号：US16872829

申请日：2020-05-12

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/00 ,  H03K17/16 ,  H03K17/56 ,  G05F1/10

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

公开(公告)号：US10680599B1

公开(公告)日：2020-06-09

申请号：US16374139

申请日：2019-04-03

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/56 ,  G05F1/10 ,  H03K17/16

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

公开(公告)号：US20200321957A1

公开(公告)日：2020-10-08

申请号：US16872829

申请日：2020-05-12

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/16 ,  H03K17/56 ,  G05F1/10

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.