公开(公告)号：US10804354B2

公开(公告)日：2020-10-13

申请号：US15933998

申请日：2018-03-23

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Martin Bartels ,  Andrea Cattaneo ,  Henning Feick ,  Christian Kuehn ,  Anton Steltenpohl

IPC: H01L23/66 ,  H01L49/02 ,  H01L27/06 ,  H01L23/522

Abstract: A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.

公开(公告)号：US20190013806A1

公开(公告)日：2019-01-10

申请号：US15644435

申请日：2017-07-07

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher ,  Anton Steltenpohl ,  Hans Taddiken ,  Danial Tayari

IPC: H03K17/16

CPC classification number: H03K17/162

Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

公开(公告)号：US11139813B1

公开(公告)日：2021-10-05

申请号：US17028452

申请日：2020-09-22

Applicant: Infineon Technologies AG

Inventor： Andrea Cattaneo ,  Valentyn Solomko

IPC: H03K3/012 ,  H03K17/16 ,  H03K17/687

Abstract: An RF switch includes serially coupled RF cells coupled between a first switch node and a second switch node, wherein each of the serially coupled RF cells include at least one transistor; and a varactor circuit coupled to at least one node of a transistor in an RF cell, and coupled between the RF cell and an adjacent RF cell, wherein the varactor circuit is configured for equalizing a voltage of the RF cell and a voltage of the adjacent RF cell during an off mode of the RF switch.

公开(公告)号：US20200321957A1

公开(公告)日：2020-10-08

申请号：US16872829

申请日：2020-05-12

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/16 ,  H03K17/56 ,  G05F1/10

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

公开(公告)号：US10734987B2

公开(公告)日：2020-08-04

申请号：US16506343

申请日：2019-07-09

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Carsten Ahrens ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher

IPC: H03K17/687 ,  H03K17/06

Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.

公开(公告)号：US10931275B2

公开(公告)日：2021-02-23

申请号：US16872829

申请日：2020-05-12

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/00 ,  H03K17/16 ,  H03K17/56 ,  G05F1/10

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

公开(公告)号：US10680599B1

公开(公告)日：2020-06-09

申请号：US16374139

申请日：2019-04-03

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/56 ,  G05F1/10 ,  H03K17/16

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

公开(公告)号：US20200028504A1

公开(公告)日：2020-01-23

申请号：US16506343

申请日：2019-07-09

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Carsten Ahrens ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher

IPC: H03K17/06

Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.

公开(公告)号：US10333510B2

公开(公告)日：2019-06-25

申请号：US15644435

申请日：2017-07-07

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher ,  Anton Steltenpohl ,  Hans Taddiken ,  Danial Tayari

IPC: H03K17/16

Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

公开(公告)号：US20180286941A1

公开(公告)日：2018-10-04

申请号：US15933998

申请日：2018-03-23

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Martin Bartels ,  Andrea Cattaneo ,  Henning Feick ,  Christian Kuehn ,  Anton Steltenpohl

IPC: H01L49/02 ,  H01L27/06 ,  H01L23/66

CPC classification number: H01L28/20 ,  H01L23/5228 ,  H01L23/66 ,  H01L27/0641 ,  H01L2924/1421

Abstract: A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.