- 专利标题: Structure and method to form bi-layer composite phase-change-memory cell
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申请号: US16182293申请日: 2018-11-06
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公开(公告)号: US10937961B2公开(公告)日: 2021-03-02
- 发明人: Injo Ok , Myung-Hee Na , Nicole Saulnier , Balasubramanian Pranatharthiharan
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Yee & Associates, P.C.
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/24
摘要:
A Phase-change-memory (PCM) cell and method of forming the PCM are provided. In an illustrative embodiment, a method of forming a PCM cell includes forming a first layer of a first germanium-antimony-tellurium (GST) type material over at least a portion of the bottom and sides of a pore through a dielectric layer of low dielectric material to a bottom electrode. The method also includes forming a second layer of a second GST type material over the first GST type material along the bottom and sides of the pore over the bottom electrode. The first GST type material is different from the second GST type material.