- 专利标题： Field effect transistor and process of forming the same
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申请号： US16751787申请日： 2020-01-24
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公开(公告)号： US10943999B2公开(公告)日： 2021-03-09
- 发明人: Ken Nakata
- 申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 申请人地址： JP Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka
- 代理机构： Smith, Gambrell & Russell, LLP.
- 优先权： JPJP2017-186637 20170927
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L29/778 ; H01L21/306 ; H01L21/02 ; H01L21/465 ; H01L21/443 ; H01L21/027 ; H01L29/267 ; H01L29/66 ; H01L29/08 ; H01L29/10 ; H01L29/20 ; H01L29/786 ; H01L21/8234 ; H01L29/45
摘要：
A process of forming a field transistor (FET) and a FET are disclosed. The FET includes a nitride semiconductor stack on a substrate. A pair of n+-regions made of oxide semiconductor material are provided within respective recesses in the semiconductor stack. Protecting layers, each made of oxide material, cover peripheries of the n+-regions. Electrodes are provided in openings in the protecting layers to be in direct contact with the n+-regions.
公开/授权文献
- US20200161465A1 FIELD EFFECT TRANSISTOR AND PROCESS OF FORMING THE SAME 公开/授权日：2020-05-21
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