Invention Grant
- Patent Title: Semiconductor device with magnetic tunnel junction
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Application No.: US16554531Application Date: 2019-08-28
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Publication No.: US10944048B2Publication Date: 2021-03-09
- Inventor: Ya-Huei Tsai , Rai-Min Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910659797.9 20190722
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; H01L27/22

Abstract:
A semiconductor device includes a substrate, an array of magnetic tunnel junctions (MTJs), an array of first dummy MTJs, and an array of second dummy MTJs. The substrate includes an array region defined thereon, and the array region includes at least an outermost corner. The array of MTJs is disposed in the array region. The array of the first dummy MTJs is disposed along the outermost corner of the array region. The array of the second dummy MTJs is disposed around the array region and the array of first dummy MTJs.
Public/Granted literature
- US20210028353A1 Semiconductor device with magnetic tunnel junction Public/Granted day:2021-01-28
Information query
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