Invention Grant
- Patent Title: Magnetic tunnel junction structures and methods of manufacture thereof
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Application No.: US16351850Application Date: 2019-03-13
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Publication No.: US10944050B2Publication Date: 2021-03-09
- Inventor: Lin Xue , Chi Hong Ching , Rongjun Wang , Mahendra Pakala
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/12 ; H01L27/22 ; H01L43/02 ; H01L43/08 ; H01L43/10
Abstract:
Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.
Public/Granted literature
- US2606528A Typist's copyholder Public/Granted day:1952-08-12
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