- 专利标题: High throughput vacuum deposition sources and system
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申请号: US15901145申请日: 2018-02-21
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公开(公告)号: US10954598B2公开(公告)日: 2021-03-23
- 发明人: George Xinsheng Guo
- 申请人: Ascentool, Inc.
- 申请人地址: US CA Palo Alto
- 专利权人: Ascentool, Inc.
- 当前专利权人: Ascentool, Inc.
- 当前专利权人地址: US CA Palo Alto
- 代理机构: SV Patent Service
- 主分类号: C23C14/35
- IPC分类号: C23C14/35 ; C23C16/458 ; C23C16/513 ; C23C16/46 ; C23C16/04 ; C23C16/50 ; C23C16/455 ; H01J37/34 ; H01J37/32 ; C23C14/04
摘要:
A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.
公开/授权文献
- US20180245217A1 High throughput Vacuum Deposition Sources and System 公开/授权日:2018-08-30