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    Versatile vacuum deposition sources and system thereof
    1.
    发明授权
    Versatile vacuum deposition sources and system thereof 有权

    公开(公告)号：US12157942B2

    公开(公告)日：2024-12-03

    申请号：US17740563

    申请日：2022-05-10

    Applicant: Ascentool, Inc.

    Inventor： George Xinsheng Guo

    IPC: C23C14/56 ,  C23C14/24 ,  C23C14/35

    Abstract: A versatile high throughput deposition apparatus includes a process chamber and a workpiece platform in the process chamber. The workpiece platform can hold a plurality of workpieces around a center region and to rotate the plurality of workpieces around the center region. Each of the plurality of workpieces includes a deposition surface facing the center region. A gas distribution system can distribute a vapor gas in the center region of the process chamber to deposit a material on the deposition surfaces on the plurality of workpieces. A magnetron apparatus can form a closed-loop magnetic field near the plurality of workpieces. The plurality of workpieces can be electrically biased to produce a plasma near the deposition surfaces on the plurality of workpieces.

    High throughput vacuum deposition sources and system
    2.
    发明授权
    High throughput vacuum deposition sources and system 有权

    公开(公告)号：US10954598B2

    公开(公告)日：2021-03-23

    申请号：US15901145

    申请日：2018-02-21

    Applicant: Ascentool, Inc.

    Inventor： George Xinsheng Guo

    IPC: C23C14/35 ,  C23C16/458 ,  C23C16/513 ,  C23C16/46 ,  C23C16/04 ,  C23C16/50 ,  C23C16/455 ,  H01J37/34 ,  H01J37/32 ,  C23C14/04

    Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

    Versatile Vacuum Deposition Sources and System thereof
    3.
    发明申请
    Versatile Vacuum Deposition Sources and System thereof 有权

    公开(公告)号：US20220380889A1

    公开(公告)日：2022-12-01

    申请号：US17740563

    申请日：2022-05-10

    Applicant: Ascentool, Inc.

    Inventor： George Xinsheng Guo

    IPC: C23C14/56 ,  C23C14/35 ,  C23C14/24

    Abstract: A versatile high throughput deposition apparatus includes a process chamber and a workpiece platform in the process chamber. The workpiece platform can hold a plurality of workpieces around a center region and to rotate the plurality of workpieces around the center region. Each of the plurality of workpieces includes a deposition surface facing the center region. A gas distribution system can distribute a vapor gas in the center region of the process chamber to deposit a material on the deposition surfaces on the plurality of workpieces. A magnetron apparatus can form a closed-loop magnetic field near the plurality of workpieces. The plurality of workpieces can be electrically biased to produce a plasma near the deposition surfaces on the plurality of workpieces.

    High throughput vacuum deposition sources and system
    4.
    发明授权
    High throughput vacuum deposition sources and system 有权

    公开(公告)号：US11359284B2

    公开(公告)日：2022-06-14

    申请号：US17177070

    申请日：2021-02-16

    Applicant: Ascentool, Inc.

    Inventor： George Xinsheng Guo

    IPC: H01J37/34 ,  C23C16/458 ,  C23C16/513 ,  C23C16/46 ,  C23C16/04 ,  C23C16/50 ,  C23C14/35 ,  C23C16/455 ,  H01J37/32 ,  C23C14/04

    Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

    Vacuum deposition into trenches and vias and etch of trenches and via
    5.
    发明授权
    Vacuum deposition into trenches and vias and etch of trenches and via 有权

    公开(公告)号：US12170185B2

    公开(公告)日：2024-12-17

    申请号：US18349140

    申请日：2023-07-08

    Applicant: Ascentool, Inc.

    Inventor： George Xinsheng Guo

    IPC: H01J37/32 ,  C23C14/35 ,  C23C16/50

    Abstract: A plasma deposition apparatus includes a first plasma source that can produce a first plasma confined in a magnetic field, which includes: a gas distribution device configured to supply a gas, a closed-loop electrode defining a center region therein and a central axis through the central region and one or more magnets that are outside an inner surface of the closed-loop electrode. The one or more magnets can produce the magnetic field in the center region. The closed-loop electrode and the one or more magnets can produce the first plasma of activated atoms, molecules, electrons, and ions from the gas. A collimator can collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and direct the ions to a substrate.

    VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA
    6.
    发明公开
    VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA 审中-公开

    公开(公告)号：US20240021411A1

    公开(公告)日：2024-01-18

    申请号：US18349140

    申请日：2023-07-08

    Applicant: Ascentool, Inc.

    Inventor： George Xinsheng Guo

    IPC: H01J37/32 ,  C23C14/35 ,  C23C16/50

    CPC classification number: H01J37/32394 ,  H01J37/32697 ,  H01J37/32339 ,  H01J37/32541 ,  C23C14/35 ,  C23C16/50 ,  H01J2237/332

    Abstract: A plasma deposition apparatus includes a first plasma source that can produce a first plasma confined in a magnetic field, which includes: a gas distribution device configured to supply a gas, a closed-loop electrode defining a center region therein and a central axis through the central region and one or more magnets that are outside an inner surface of the closed-loop electrode. The one or more magnets can produce the magnetic field in the center region. The closed-loop electrode and the one or more magnets can produce the first plasma of activated atoms, molecules, electrons, and ions from the gas. A collimator can collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and direct the ions to a substrate.

    High throughput Vacuum Deposition Sources and System
    8.
    发明申请
    High throughput Vacuum Deposition Sources and System 有权

    公开(公告)号：US20210164099A1

    公开(公告)日：2021-06-03

    申请号：US17177070

    申请日：2021-02-16

    Applicant: Ascentool, Inc.

    Inventor： George Xinsheng Guo

    IPC: C23C16/458 ,  C23C14/35 ,  C23C16/46 ,  H01J37/34 ,  H01J37/32 ,  C23C14/04 ,  C23C16/04 ,  C23C16/455 ,  C23C16/513 ,  C23C16/50

    Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

    Vacuum deposition into trenches and vias
    10.
    发明授权
    Vacuum deposition into trenches and vias 有权

    公开(公告)号：US12154770B2

    公开(公告)日：2024-11-26

    申请号：US18346967

    申请日：2023-07-05

    Applicant: Ascentool, Inc.

    Inventor： George Xinsheng Guo

    IPC: H01J37/34 ,  H01J37/32

    Abstract: A plasma deposition apparatus includes a first plasma source that can produce a plasma confined in a magnetic field. The first plasma source includes a closed-loop electrode defining a center region therein and a central axis through the central region, and one or more magnets that are outside an inner surface of the closed-loop electrode. The magnets can produce a magnetic field in the center region. The one or more magnets can be at least partially embedded in the closed-loop electrode. The closed-loop electrode and the magnets can produce a plasma of ions to sputter atoms off a sputtering target or a backing plate.

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