- 专利标题: Hybrid BEOL metallization utilizing selective reflection mask
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申请号: US16782311申请日: 2020-02-05
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公开(公告)号: US10957646B2公开(公告)日: 2021-03-23
- 发明人: Benjamin D. Briggs , Cornelius Brown Peethala , Michael Rizzolo , Koichi Motoyama , Gen Tsutsui , Ruqiang Bao , Gangadhara Raja Muthinti , Lawrence A. Clevenger
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Fleit Intellectual PropertyLaw
- 代理商 Donna Flores
- 主分类号: H01L23/532
- IPC分类号: H01L23/532 ; H01L21/02 ; H01L21/48 ; H01L21/768 ; H01L21/306
摘要:
A semiconductor wafer has a top surface, a dielectric insulator, a plurality of narrow copper wires, a plurality of wide copper wires, an optical pass through layer over the top surface, and a self-aligned pattern in a photo-resist layer. The plurality of wide copper wires and the plurality of narrow copper wires are embedded in a dielectric insulator. The width of each wide copper wire is greater than the width of each narrow copper. An optical pass through layer is located over the top surface. A self-aligned pattern in a photo-resist layer, wherein photo-resist exists only in areas above the wide copper wires, is located above the optical pass through layer.