Invention Grant
- Patent Title: Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation
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Application No.: US16256143Application Date: 2019-01-24
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Publication No.: US10957694B2Publication Date: 2021-03-23
- Inventor: Karthik Balakrishnan , Keith E. Fogel , Sivananda K. Kanakasabapathy , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Randall Bluestone
- Main IPC: H01L29/161
- IPC: H01L29/161 ; H01L27/088 ; H01L29/10 ; H01L21/8234 ; H01L21/02 ; H01L29/78 ; H01L21/762
Abstract:
A method of forming a semiconductor device that includes providing regions of epitaxial oxide material on a substrate of a first lattice dimension, wherein regions of the epitaxial oxide material separate regions of epitaxial semiconductor material having a second lattice dimension are different than the first lattice dimension to provide regions of strained semiconductor. The regions of the strained semiconductor material are patterned to provide regions of strained fin structures. The epitaxial oxide that is present in the gate cut space obstructs relaxation of the strained fin structures. A gate structure is formed on a channel region of the strained fin structures separating source and drain regions of the fin structures.
Public/Granted literature
- US20190172827A1 EPITAXIAL OXIDE FIN SEGMENTS TO PREVENT STRAINED SEMICONDUCTOR FIN END RELAXATION Public/Granted day:2019-06-06
Information query
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