Invention Grant
- Patent Title: Semiconductor processing chamber multistage mixing apparatus and methods
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Application No.: US15942051Application Date: 2018-03-30
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Publication No.: US10964512B2Publication Date: 2021-03-30
- Inventor: Mehmet Tugrul Samir , Dongqing Yang , Dmitry Lubomirsky
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/311 ; H01L21/67 ; C23C16/00

Abstract:
Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.
Public/Granted literature
- US20190252154A1 SEMICONDUCTOR PROCESSING CHAMBER MULTISTAGE MIXING APPARATUS AND METHODS Public/Granted day:2019-08-15
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