A method for integrating a stack of fins to form an electrically erasable programmable read-only memory (EEPROM) device is presented. The method includes forming a stack of at least a first fin structure and a second fin structure over a semiconductor substrate, forming a sacrificial gate straddling the stack of at least the first fin structure and the second fin structure, forming a first conductivity type source/drain region to the first fin structure, and forming a second conductivity type source/drain to the second fin structure. The method further includes removing the sacrificial gate to form a gate opening, and forming a single floating gate in communication with a channel for each of the first and second fin structures.