- 专利标题： Method for forming semiconductor device structure
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申请号： US16669065申请日： 2019-10-30
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公开(公告)号： US10971363B2公开(公告)日： 2021-04-06
- 发明人: Chih-Ming Lai , Shih-Ming Chang , Wei-Liang Lin , Chin-Yuan Tseng , Ru-Gun Liu
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/033
摘要：
A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer has a trench. The method includes forming first spacers over inner walls of the trench. The method includes removing a portion of the first spacers. The method includes forming a filling layer into the trench to cover the first spacers. The filling layer and the first spacers together form a strip structure. The method includes removing the first layer. The method includes forming second spacers over two opposite first sidewalls of the strip structure.
公开/授权文献
- US20200066523A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE 公开/授权日：2020-02-27
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