Invention Grant
- Patent Title: Micro laser diode transfer method and manufacturing method
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Application No.: US16465745Application Date: 2016-12-05
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Publication No.: US10971890B2Publication Date: 2021-04-06
- Inventor: Quanbo Zou , Zhe Wang
- Applicant: Goertek, Inc.
- Applicant Address: CN Weifang
- Assignee: Goertek, Inc.
- Current Assignee: Goertek, Inc.
- Current Assignee Address: CN Weifang
- Agency: Baker Botts L.L.P.
- International Application: PCT/CN2016/108557 WO 20161205
- International Announcement: WO2018/102961 WO 20180614
- Main IPC: H01S5/02
- IPC: H01S5/02 ; H01S5/042 ; H01S5/183 ; H01S5/42 ; H01S5/0234 ; H01S5/022 ; H01S5/40

Abstract:
A micro laser diode transfer method and a manufacturing method comprise: forming a bonding layer (515) on a receiving substrate (513), wherein first type electrodes (514) are connected to the bonding layer (515); bringing a first side of the micro laser diodes (500r) on a carrier substrate (520) into contact with the bonding layer (515), wherein the carrier substrate (520) is laser-transparent; and irradiating selected micro laser diodes (500r) with laser from the side of the carrier substrate (520) to lift-off the selected micro laser diodes (500r) from the carrier substrate (520). This method may improve yield.
Public/Granted literature
- US20190386454A1 MICRO LASER DIODE TRANSFER METHOD AND MANUFACTURING METHOD Public/Granted day:2019-12-19
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