- 专利标题： Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack
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申请号： US16277260申请日： 2019-02-15
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公开(公告)号： US10978234B2公开(公告)日： 2021-04-13
- 发明人: Jyotirmoy Chatterjee , Paulo Veloso Coelho , Bernard Dieny , Ricardo Sousa , Lucian Prejbeanu
- 申请人： Commissariat á l'énergie atomique et aux énergies alternatives , Université Grenoble Alpes , Centre National de la Recherche Scientifique (CNRS)
- 申请人地址： FR Paris; FR Saint Martin d'Hères; FR Paris
- 专利权人： Commissariat á l'énergie atomique et aux énergies alternatives,Université Grenoble Alpes,Centre National de la Recherche Scientifique (CNRS)
- 当前专利权人： Commissariat á l'énergie atomique et aux énergies alternatives,Université Grenoble Alpes,Centre National de la Recherche Scientifique (CNRS)
- 当前专利权人地址： FR Paris; FR Saint Martin d'Hères; FR Paris
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 优先权： FR1851302 20180215
- 主分类号： G06F1/16
- IPC分类号： G06F1/16 ; H01L51/00 ; G06F3/044 ; G06F3/041 ; H01L51/52 ; H01L27/32 ; H01F10/32 ; H01L43/10 ; H01L43/02 ; H01L27/22 ; G11C11/16 ; G01R33/09 ; H01F10/12 ; H01F41/30 ; H01L43/12
摘要：
A magnetic stack includes a first element including a ferromagnetic layer; a second element including a metal layer able to confer on the assembly formed by the first and the second elements a magnetic anisotropy perpendicular to the plane of the layers. The first element further includes a refractory metal material, the second element being arranged on the first element.
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