Invention Grant
- Patent Title: Methods for depositing fluorine/carbon-free conformal tungsten
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Application No.: US15461842Application Date: 2017-03-17
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Publication No.: US10985023B2Publication Date: 2021-04-20
- Inventor: Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/3205 ; C23C16/42 ; H01L21/768 ; C23C16/14 ; C23C16/455 ; H01L21/28 ; C23C16/06 ; C23C16/02 ; C23C16/34
Abstract:
Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
Public/Granted literature
- US20170194156A1 Methods For Depositing Fluorine/Carbon-Free Conformal Tungsten Public/Granted day:2017-07-06
Information query
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