Invention Grant
- Patent Title: Gate oxide forming process
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Application No.: US16667921Application Date: 2019-10-30
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Publication No.: US10985071B1Publication Date: 2021-04-20
- Inventor: Yuan-Cheng Yang , Yi-Han Su , Sheng-Chen Chung , Chen-An Kuo , Chun-Lin Chen , Chiu-Te Lee , Chih-Chung Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/8249 ; H01L21/8238 ; H01L21/28
Abstract:
A gate oxide forming process includes the following steps. A substrate including a first area and a second area is provided. A first oxide layer, a silicon containing cap layer and a second oxide layer on the substrate of the first area and the second area are sequentially and blanketly formed. The silicon containing cap layer and the second oxide layer in the first area are removed. An oxidation process is performed to oxidize the silicon containing cap layer and a gate oxide layer is formed in the second area.
Public/Granted literature
- US20210134679A1 GATE OXIDE FORMING PROCESS Public/Granted day:2021-05-06
Information query
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