Invention Grant
- Patent Title: N-well resistor
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Application No.: US16451797Application Date: 2019-06-25
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Publication No.: US10985244B2Publication Date: 2021-04-20
- Inventor: Shesh Mani Pandey , Chung Foong Tan , Baofu Zhu
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Roberts Calderon Safran & Cole, P.C.
- Agent David Cain; Andrew M. Calderon
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/762 ; H01L27/12
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to n-well resistors and methods of manufacture. The structure includes: a substrate composed of a N-well implant region and a deep N-well implant region; and a plurality of shallow trench isolation regions extending into both the N-well implant region and a deep N-well implant region.
Information query
IPC分类:
