High temperature atomic layer deposition of silicon oxide thin films

Invention Grant

US10991571B2 High temperature atomic layer deposition of silicon oxide thin films 有权

Patent Title: High temperature atomic layer deposition of silicon oxide thin films
Application No.: US16255464

Application Date: 2019-01-23
Publication No.: US10991571B2

Publication Date: 2021-04-27
Inventor: Haripin Chandra , Meiliang Wang , Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Mark Leonard O'Neill
Applicant: Versum Materials US, LLC
Applicant Address: US AZ Tempe
Assignee: Versum Materials US, LLC
Current Assignee: Versum Materials US, LLC
Current Assignee Address: US AZ Tempe
Agent David K. Benson
Main IPC: H01L21/02
IPC: H01L21/02 ; C23C16/40 ; C23C16/455 ; C07F7/10

Abstract:

Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理