公开(公告)号：US11725111B2

公开(公告)日：2023-08-15

申请号：US17507771

申请日：2021-10-21

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki ,  Bing Han ,  Mark Leonard O'Neill

IPC: C23C16/30 ,  C09D7/63 ,  C07F7/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C09D5/00 ,  C07F7/10 ,  H01L21/02

CPC classification number: C09D7/63 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02211

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：US10991571B2

公开(公告)日：2021-04-27

申请号：US16255464

申请日：2019-01-23

Applicant: Versum Materials US, LLC

Inventor： Haripin Chandra ,  Meiliang Wang ,  Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C07F7/10

Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.

公开(公告)号：US10899500B2

公开(公告)日：2021-01-26

申请号：US16355177

申请日：2019-03-15

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Ronald Martin Pearlstein ,  Richard Ho ,  Daniel P. Spence ,  Xinjian Lei

IPC: B65D25/14 ,  C07F7/18 ,  C07F7/10 ,  C23C16/00

Abstract: Described herein is an FCVD process for depositing a silicon-containing film from at least one alkoxysilylamine precursor having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group.

公开(公告)号：US20190225377A1

公开(公告)日：2019-07-25

申请号：US16355177

申请日：2019-03-15

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Ronald Martin Pearlstein ,  Richard Ho ,  Daniel P. Spence ,  Xinjian Lei

IPC: B65D25/14 ,  C07F7/18 ,  C07F7/10 ,  C23C16/00

Abstract: Described herein is an FCVD process for depositing a silicon-containing film from at least one alkoxysilylamine precursor having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group.

公开(公告)号：US11142658B2

公开(公告)日：2021-10-12

申请号：US16537186

申请日：2019-08-09

Applicant: Versum Materials US, LLC

Inventor： Daniel P. Spence ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Manchao Xiao ,  Jianheng Li

IPC: C23C16/30 ,  C09D7/63 ,  C01B32/90 ,  C07F7/18 ,  C08L83/04 ,  C09D4/00 ,  C09D183/08 ,  C23C16/455 ,  C01B21/082 ,  C01B33/18 ,  C07F7/10 ,  C08G77/26

Abstract: Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein: R1Si(NR2R3)(NR4R5)OR6  I where R1 is selected from hydrogen, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group; R2, R3, R4, and R5 are each independently selected from hydrogen, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group; R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group.

公开(公告)号：US20190287798A1

公开(公告)日：2019-09-19

申请号：US16398209

申请日：2019-04-29

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki ,  Bing Han ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C09D7/63 ,  C07F7/10 ,  C07F7/08 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C09D5/00

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：US20190189431A1

公开(公告)日：2019-06-20

申请号：US16255464

申请日：2019-01-23

Applicant: Versum Materials US, LLC

Inventor： Haripin Chandra ,  Meiliang Wang ,  Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C07F7/10 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/02164 ,  C07F7/10 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228

Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.

公开(公告)号：US20170183502A1

公开(公告)日：2017-06-29

申请号：US15461999

申请日：2017-03-17

Applicant: VERSUM MATERIALS US, LLC

Inventor： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC: C09D1/00 ,  C01B33/021 ,  C01B33/12 ,  C23C16/455 ,  C01B21/082 ,  C07F7/02 ,  C23C16/40 ,  H01L21/02 ,  C01B21/068

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US11282710B2

公开(公告)日：2022-03-22

申请号：US16548983

申请日：2019-08-23

Applicant: Versum Materials US, LLC

Inventor： Ronald Martin Pearlstein

IPC: H01L21/02 ,  H01L21/3105 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34

Abstract: A method for selectively passivating a surface of a substrate, wherein the surface of the substrate includes at least a first surface comprising silicon nitride and at least a second surface comprising a material other than silicon nitride. The method includes the step of exposing the surface to at least one organoisocyanate wherein the organoisocyanate selectively reacts with the silicon nitride to passivate the first surface thereby leaving the second surface substantially unreacted.

公开(公告)号：US20200066539A1

公开(公告)日：2020-02-27

申请号：US16548983

申请日：2019-08-23

Applicant: Versum Materials US, LLC

Inventor： Ronald Martin Pearlstein

IPC: H01L21/3105 ,  C23C16/455 ,  C23C16/34 ,  C23C16/02 ,  H01L21/02

Abstract: A method for selectively passivating a surface of a substrate, wherein the surface of the substrate includes at least a first surface comprising silicon nitride and at least a second surface comprising a material other than silicon nitride. The method includes the step of exposing the surface to at least one organoisocyanate wherein the organoisocyanate selectively reacts with the silicon nitride to passivate the first surface thereby leaving the second surface substantially unreacted.