A method for fabricating a semiconductor device to account for misalignment includes forming a top via on a first conductive line formed on a substrate, forming liners each using a first dielectric material, including forming first and second liners to a first height along sidewalls of the top via, forming dielectric layers, including forming first and second dielectric layers on the first conductive line to the first height and adjacent to the first and second liners, respectively, recessing the top via to a second height, and forming an additional dielectric layer on the recessed top via to the first height using a second dielectric material. The first and second dielectric materials are selected to compensate for potential misalignment between the first conductive line and the top via.