Invention Grant
- Patent Title: Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same
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Application No.: US16556919Application Date: 2019-08-30
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Publication No.: US10991706B2Publication Date: 2021-04-27
- Inventor: Masatoshi Nishikawa , Jayavel Pachamuthu
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11519 ; H01L27/11582 ; H01L27/11565 ; H01L27/1157 ; H01L27/11524
Abstract:
An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. A memory opening is formed through the alternating stack. An amorphous semiconductor material portion is formed at a bottom region of the memory opening. A memory film is formed in the memory opening. The memory film includes an opening at a bottom portion thereof, and a surface of the amorphous semiconductor material portion is physically exposed at a bottom of the opening in the memory film. An amorphous semiconductor channel material layer is formed on the exposed surface of the amorphous semiconductor material portion and over the memory film. A vertical semiconductor channel is formed by annealing the amorphous semiconductor material portion and the amorphous semiconductor channel material layer. The vertical semiconductor channel and contacts an entire top surface of an underlying semiconductor material portion.
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