Invention Grant
- Patent Title: Magnetoresistive random access memory
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Application No.: US16430437Application Date: 2019-06-04
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Publication No.: US10991757B2Publication Date: 2021-04-27
- Inventor: Ting-Hsiang Huang , Yi-Chung Sheng , Sheng-Yuan Hsueh , Kuo-Hsing Lee , Chih-Kai Kang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910384092.0 20190509
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; H01L43/02
Abstract:
A semiconductor device includes: a substrate having a magnetic tunneling junction (MTJ) region and a logic region; a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle; and a first metal interconnection on the MTJ. Preferably, a top view of the first metal interconnection comprises a flat oval overlapping the circle.
Information query
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