Invention Grant
- Patent Title: Composition and process for selectively etching p-doped polysilicon relative to silicon nitride
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Application No.: US15777837Application Date: 2016-11-22
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Publication No.: US10991809B2Publication Date: 2021-04-27
- Inventor: Steven Bilodeau , Emanuel I Cooper
- Applicant: ENTEGRIS, Inc.
- Applicant Address: US MA Billerica
- Assignee: ENTEGRIS, Inc.
- Current Assignee: ENTEGRIS, Inc.
- Current Assignee Address: US MA Billerica
- Agency: Entegris, Inc.
- International Application: PCT/US2016/063323 WO 20161122
- International Announcement: WO2017/091572 WO 20170601
- Main IPC: C09K13/08
- IPC: C09K13/08 ; H01L21/02 ; H01L21/04 ; H01L21/225 ; H01L21/306 ; H01L21/311 ; H01L21/3213 ; H01L29/49 ; H01L29/51 ; H01L29/66
Abstract:
A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a high-k/metal gate integration scheme.
Public/Granted literature
- US20180337253A1 Composition and Process for Selectively Etching P-Doped Polysilicon Relative to Silicon Nitride Public/Granted day:2018-11-22
Information query
