Invention Grant
- Patent Title: Variable resistance memory device and method of fabricating the same
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Application No.: US16401297Application Date: 2019-05-02
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Publication No.: US10991880B2Publication Date: 2021-04-27
- Inventor: Ilmok Park , Gwang-Hyun Baek , Seulji Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0099411 20180824
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00 ; G11C5/06 ; G11C13/00 ; H01L27/24

Abstract:
A variable resistance memory device includes a substrate. A first conductive line is disposed on the substrate and extends primarily in a first direction. A second conductive line is disposed on the substrate and extends primarily in a second direction. The second direction intersects the first direction. A phase change pattern is disposed between the first conductive line and the second conductive line. A bottom electrode is disposed between the phase change pattern and the first bottom electrode includes first a first sidewall segment that connects the first conductive line and the phase change pattern to each other. The phase change pattern has a width in the first direction that decreases toward the substrate. The first sidewall segment has a first lateral surface and a second lateral surface that face each other. A lowermost portion of the phase change pattern is disposed between the first lateral surface and the second lateral surface.
Public/Granted literature
- US20200066985A1 VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2020-02-27
Information query
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