- 专利标题: Methods of forming resistive memory elements
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申请号: US16552745申请日: 2019-08-27
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公开(公告)号: US10991882B2公开(公告)日: 2021-04-27
- 发明人: Christopher W. Petz , Yongjun Jeff Hu , Scott E. Sills , D. V. Nirmal Ramaswamy
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: TraskBritt
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; G11C13/00 ; H01L45/00 ; H01L27/24 ; H01L23/522 ; H01L27/22 ; C23C14/06 ; C23C14/08 ; C23C14/18 ; C23C14/34 ; C23C16/34 ; C23C16/36 ; C23C16/40 ; C23C16/455
摘要:
A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.
公开/授权文献
- US20200013955A1 METHODS OF FORMING RESISTIVE MEMORY ELEMENTS 公开/授权日:2020-01-09
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