Invention Grant
- Patent Title: Adjustment circuit for partitioned memory block
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Application No.: US16736267Application Date: 2020-01-07
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Publication No.: US10998058B2Publication Date: 2021-05-04
- Inventor: Yu-Der Chih , Hung-Chang Yu , Ku-Feng Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C16/08 ; G11C16/32 ; G11C16/34 ; G11C29/02 ; G11C7/04

Abstract:
The present disclosure describes an adjustment circuit that can be used, for example, in a memory system with partitioned memory blocks. The adjustment circuit can include a controller circuit, a timer circuit, and a temperature adaptive reference (TAR) generator. The controller circuit can be configured to output a control signal that indicates a memory type (e.g., code memory or data memory) associated with a partitioned memory block. The timer circuit can be configured to output a timing signal for a read memory operation based on the control signal. And, the TAR generator can be configured to adjust a verify reference current for a verify memory operation based on temperature, where the verify reference current is set based on the control signal.
Information query