- Patent Title: Fin isolation structure for FinFET and method of forming the same
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Application No.: US16927145Application Date: 2020-07-13
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Publication No.: US10998239B2Publication Date: 2021-05-04
- Inventor: Chu-An Lee , Chen-Hao Wu , Peng-Chung Jangjian , Chun-Wen Hsiao , Teng-Chun Tsai , Huang-Lin Chao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/06 ; H01L27/088 ; H01L21/762 ; H01L21/3105
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate. The semiconductor device structure also includes an insulating structure that includes a first insulating layer formed between and separating from the first fin and the second fin, a second insulating layer embedded in the first insulating layer, a first capping layer formed in the first insulating layer to cover a top surface of the second insulating layer, and a second capping layer in the first capping layer.
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