公开(公告)号：US10998239B2

公开(公告)日：2021-05-04

申请号：US16927145

申请日：2020-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chu-An Lee ,  Chen-Hao Wu ,  Peng-Chung Jangjian ,  Chun-Wen Hsiao ,  Teng-Chun Tsai ,  Huang-Lin Chao

IPC: H01L21/8234 ,  H01L29/06 ,  H01L27/088 ,  H01L21/762 ,  H01L21/3105

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate. The semiconductor device structure also includes an insulating structure that includes a first insulating layer formed between and separating from the first fin and the second fin, a second insulating layer embedded in the first insulating layer, a first capping layer formed in the first insulating layer to cover a top surface of the second insulating layer, and a second capping layer in the first capping layer.

公开(公告)号：US10714395B2

公开(公告)日：2020-07-14

申请号：US16277326

申请日：2019-02-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chu-An Lee ,  Chen-Hao Wu ,  Peng-Chung Jangjian ,  Chun-Wen Hsiao ,  Teng-Chun Tsai ,  Huang-Lin Chao

IPC: H01L29/06 ,  H01L27/08 ,  H01L21/82 ,  H01L21/8234 ,  H01L27/088

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate, an isolation feature between and adjacent to the first fin and the second fin, and a fin isolation structure between the first fin and the second fin. The fin isolation structure includes a first insulating layer partially embedded in the isolation feature, a second insulating layer having sidewall surfaces and a bottom surface that are covered by the first insulating layer, a first capping layer covering the second insulating layer and having sidewall surfaces that are covered by the first insulating layer, and a second capping layer having sidewall surfaces and a bottom surface that are covered by the first capping layer.

公开(公告)号：US11756825B2

公开(公告)日：2023-09-12

申请号：US16953949

申请日：2020-11-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shen-Nan Lee ,  Teng-Chun Tsai ,  Chen-Hao Wu ,  Chu-An Lee ,  Chun-Hung Liao ,  Tsung-Ling Tsai

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76802 ,  H01L21/7684 ,  H01L21/76831 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53209

Abstract: A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.