Invention Grant
- Patent Title: Low-defect graphene-based devices and interconnects
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Application No.: US15777650Application Date: 2015-12-17
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Publication No.: US10998405B2Publication Date: 2021-05-04
- Inventor: Paul A. Zimmerman , Ian A. Young , Wilman Tsai
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2015/066492 WO 20151217
- International Announcement: WO2017/105470 WO 20170622
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L29/16 ; H01L29/417 ; H01L29/66 ; H01L29/778 ; H01L29/06 ; C01B32/182 ; H01L29/739 ; H01L23/532

Abstract:
Molecular Graphene (MG) of a physical size and bonding character that render the molecule suitable as a channel material in an electronic device, such as a tunnel field effect transistor (TFET). The molecular graphene may be a large polycyclic aromatic hydrocarbon (PAH) employed as a discrete element, or as a repeat unit, within an active or passive electronic device. In some embodiments, a functionalized PAH is disposed over a substrate surface and extending between a plurality of through-substrate vias. Heterogeneous surfaces on the substrate are employed to direct deposition of the functionalized PAH molecule to surface sites interstitial to the array of vias. Vias may be backfilled with conductive material as self-aligned source/drain contacts. Directed self-assembly techniques may be employed to form local interconnect lines coupled to the conductive via material. In some embodiments, graphene-based interconnects comprising a linear array of PAH molecules are formed over a substrate.
Public/Granted literature
- US20180350914A1 LOW-DEFECT GRAPHENE-BASED DEVICES & INTERCONNECTS Public/Granted day:2018-12-06
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