Invention Grant
- Patent Title: Semiconductor devices including recessed source/drain silicides and methods of forming the same
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Application No.: US16916643Application Date: 2020-06-30
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Publication No.: US10998412B2Publication Date: 2021-05-04
- Inventor: Heon Bok Lee , Chul Sung Kim , Sang Jin Hyun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: jMuir Patent Law, PLLC
- Priority: KR10-2017-0111745 20170901
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/08 ; B82Y10/00 ; H01L29/786 ; H01L29/66 ; H01L29/775 ; H01L21/285 ; H01L21/768 ; H01L29/06 ; H01L29/423 ; H01L29/45 ; H01L29/78 ; H01L29/10
Abstract:
A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.
Public/Granted literature
- US20200343350A1 SEMICONDUCTOR DEVICES INCLUDING RECESSED SOURCE/DRAIN SILICIDES AND METHODS OF FORMING THE SAME Public/Granted day:2020-10-29
Information query
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