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1.
公开(公告)号:US10714579B2
公开(公告)日:2020-07-14
申请号:US15999191
申请日:2018-08-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Heon Bok Lee , Chul Sung Kim , Sang Jin Hyun
IPC: H01L29/417 , H01L29/08 , B82Y10/00 , H01L29/786 , H01L29/66 , H01L29/775 , H01L21/285 , H01L21/768 , H01L29/06 , H01L29/423 , H01L29/45 , H01L29/78 , H01L29/10
Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.
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公开(公告)号:US10557198B2
公开(公告)日:2020-02-11
申请号:US16190558
申请日:2018-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Heon Bok Lee , Dae Yong Kim , Dong Woo Kim , Jun Ki Park , Sang Yub Ie , Sang Jin Hyun
IPC: H01L21/285 , C23C16/455
Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.
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3.
公开(公告)号:US10998412B2
公开(公告)日:2021-05-04
申请号:US16916643
申请日:2020-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Heon Bok Lee , Chul Sung Kim , Sang Jin Hyun
IPC: H01L29/417 , H01L29/08 , B82Y10/00 , H01L29/786 , H01L29/66 , H01L29/775 , H01L21/285 , H01L21/768 , H01L29/06 , H01L29/423 , H01L29/45 , H01L29/78 , H01L29/10
Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.
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公开(公告)号:US20200176575A1
公开(公告)日:2020-06-04
申请号:US16695675
申请日:2019-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Heon Bok Lee , Dae Yong Kim , Wan Don Kim , Jeong Hyuk Yim , Won Keun Chung , Hyo Seok Choi , Sang Jin Hyun
IPC: H01L29/417 , H01L29/66 , H01L29/78 , H01L21/768 , H01L29/08
Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.
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公开(公告)号:US11296196B2
公开(公告)日:2022-04-05
申请号:US16695675
申请日:2019-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Heon Bok Lee , Dae Yong Kim , Wan Don Kim , Jeong Hyuk Yim , Won Keun Chung , Hyo Seok Choi , Sang Jin Hyun
IPC: H01L29/417 , H01L29/66 , H01L29/08 , H01L21/768 , H01L29/78
Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.
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公开(公告)号:US20190292664A1
公开(公告)日:2019-09-26
申请号:US16190558
申请日:2018-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Heon Bok Lee , Dae Yong Kim , Dong Woo Kim , Jun Ki Park , Sang Yub Ie , Sang Jin Hyun
IPC: C23C16/455 , H01L21/285
Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.
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公开(公告)号:US12087833B2
公开(公告)日:2024-09-10
申请号:US18380754
申请日:2023-10-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Heon Bok Lee , Dae Yong Kim , Wan Don Kim , Jeong Hyuk Yim , Won Keun Chung , Hyo Seok Choi , Sang Jin Hyun
IPC: H01L29/417 , H01L21/768 , H01L29/08 , H01L29/66 , H01L29/78
CPC classification number: H01L29/41775 , H01L21/76897 , H01L29/0847 , H01L29/41791 , H01L29/6681 , H01L29/7851
Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.
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公开(公告)号:US11799004B2
公开(公告)日:2023-10-24
申请号:US17694759
申请日:2022-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Heon Bok Lee , Dae Yong Kim , Wan Don Kim , Jeong Hyuk Yim , Won Keun Chung , Hyo Seok Choi , Sang Jin Hyun
IPC: H01L29/417 , H01L29/66 , H01L29/08 , H01L21/768 , H01L29/78
CPC classification number: H01L29/41775 , H01L21/76897 , H01L29/0847 , H01L29/41791 , H01L29/6681 , H01L29/7851
Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.
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9.
公开(公告)号:US20200343350A1
公开(公告)日:2020-10-29
申请号:US16916643
申请日:2020-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Heon Bok Lee , Chul Sung Kim , Sang Jin Hyun
IPC: H01L29/417 , H01L29/08 , B82Y10/00 , H01L29/786 , H01L29/66 , H01L29/775 , H01L21/285 , H01L21/768 , H01L29/06 , H01L29/423 , H01L29/45 , H01L29/78
Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.
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