Invention Grant
- Patent Title: Integrated circuit device fins
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Application No.: US16550743Application Date: 2019-08-26
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Publication No.: US10998428B2Publication Date: 2021-05-04
- Inventor: Che-Cheng Chang , Chih-Han Lin , Wei-Chiang Hung , Wei-Hao Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/165 ; H01L29/417 ; H01L21/762 ; H01L21/02 ; H01L21/306 ; H01L21/324 ; H01L21/308 ; H01L29/51 ; H01L29/49

Abstract:
Examples of an integrated circuit and a method for forming the integrated circuit are provided herein. In some examples, a method includes receiving a substrate that includes: a plurality of fins extending above a remainder of the substrate; a first region that includes a first fence region that contains a first subset of the plurality of fins; and a second region that includes a second fence region that contains a second subset of the plurality of fins. The first region has a first performance characteristic, and the second region has a second performance characteristic that is different from the first. Based on the first performance characteristic, the first subset of the plurality of fins is recessed to a first height, and based on the second performance characteristic, the second subset of the plurality of fins is recessed to a second height that is less than the first height.
Public/Granted literature
- US20200013881A1 Integrated Circuit Device Fins Public/Granted day:2020-01-09
Information query
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